Vertical Field Emission Air-Channel Diodes and Transistors

Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors

As an add-on device option for the ultra-low power CMOS technology, the double-gated vertical-channel Tunnel Field-Effect Transistors (TFETs) of different source configurations are comparatively studied from the perspectives of fabrication and current drivability. While the Top-Source design where the source of the device is placed on the top of the fin makes the fabrication and source engineer...

Unipolar spin diodes and transistors

Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p − n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.

Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state cu...

Removing the current-limit of vertical organic field effect transistors

Vertical nanowire array-based field effect transistors for ultimate scaling.

Nanowire-based field-effect transistors are among the most promising means of overcoming the limits of today's planar silicon electronic devices, in part because of their suitability for gate-all-around architectures, which provide perfect electrostatic control and facilitate further reductions in "ultimate" transistor size while maintaining low leakage currents. However, an architecture combin...